![]() Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. This work is devoted to the analysis of /spl gamma/-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator. The parameter values specify the device characteristics as explained below. The first statement defines the and the second one is the. T Technology > TK Electrical engineering. All semiconductor devices are specified by using lines. The cur rent gain degradation is believed to be governed by the in creasing re combination current in theīipolar junction transistor, displacement damage, ionizing damage, recombination current Neutron radiationĬan cause displacement dam age in the bulk layer of the transistor structure and gamma radia -tion can induce ionizing damage in the oxide layer of emit ter-base depletion layer. The current gain of all types of the studied transistors decreased as a function of the total dose. This does not prevent the use of these devices in a radiative environment. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. In high-power diodes gamma irradiation of 15 Mrad (Si) lead to a slight decrease of the leakage current at a reverse bias of 5 V. Analyses on irra-diated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. TRIGA Mark-II reactor at the Malaysian Nuclear Agency. Request PDF On May 1, 2018, Mohan Liu and others published Investigation of the Degradation Rate in DPSA Bipolar Transistor under Gamma Irradiation Find, read and cite all the research you. This paper examines neutron radia tion with pneumatic transfer system of which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. (A PNPBJT would have a P+emitter, N-type base, and P-type collector.) NPN transistors exhibit higher transconductance and T Huch08v3. the most striking and common effect of radiation on bipolar transistor is the gain (hFE) degradation. 81a), a P-type base, and an N-type collector. accumulated gamma dose for the three transistors. Such devices were fabricated in a BiCMOS SOI. 8.1 INTRODUCTION TO THE BJT A BJT is made of a heavily doped emitter(see Fig. Electronics components such as bipolar junction transistors, diodes, etc. This work deals with the analysis of -ray effects on NPN and PNP bipolar junction transistors (BJT).
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